BAT85 datasheet(1/8 Pages) NXP

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BAT85

Schottky barrier single diode

24 July 2012

Product data sheet

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1. Product profile

1.1 General description

Planar Schottky barrier diode with an integrated guard ring for stress protection,

encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode

is suitable for mounting on a 2 E (5.08 mm) pitch.

1.2 Features and benefits

• Low forward voltage

• Guard ring protected

• Hermetically-sealed leaded glass package

1.3 Applications

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF(AV)

average forward

current

δ ≤ 0.5 ; f = 20 kHz; PCB mounting,

lead length = 4 mm; half sine wave

-

200

mA

VR

reverse voltage

-

30

V

VF

forward voltage

IF = 10 mA; Tamb = 25 °C

-

400

mV

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

1

K

cathode

2

A

anode

a

k

DO-34 (SOD68)

aaa-003679

K

A

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