BAS516 datasheet(4/20 Pages) NXP

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BAS16_SER_5

Product data sheet

Rev. 05 — 25 August 2008

4 of 20

NXP Semiconductors

BAS16 series

High-speed switching diodes

Limiting values

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VRRM

repetitive peak reverse

voltage

100

reverse voltage

100

forward current

BAS16

[1] -

215

BAS16H

BAS16L

[2] -

215

BAS16T

[1] -

155

BAS16VV

BAS16VY

[1][3] -

200

BAS16W

[1] -

175

BAS16J

BAS316

BAS516

[1] -

250

IFRM

repetitive peak forward

current

tp ≤ 0.5 µs;

δ≤ 0.25

500

IFSM

non-repetitive peak forward

current

square wave

[4]

tp =1 µs-

tp =1ms

tp = 1 s

0.5

Ptot

total power dissipation

BAS16

Tamb ≤ 25 °C

[1] -

250

BAS16H

Tamb ≤ 25 °C

[2][5]

[6]

380

[5][6]

[7]

830

BAS16J

Tamb ≤ 25 °C

[5][6]

[7]

550

BAS16L

Tamb ≤ 25 °C

[2][5]

[6]

250

BAS16T

Tsp ≤ 90 °C

[1] -

170

BAS16VV

Tamb ≤ 25 °C

[1][3]

[5][8]

180

BAS16VY

Tsp ≤ 85 °C

[1][3]

[8]

250

BAS16W

Tamb ≤ 25 °C

[1] -

200

BAS316

Tsp ≤ 90 °C

[1][6] -

400

BAS516

Tsp ≤ 90 °C

[1][5]

[6]

500

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