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ST1CC40DR bảng dữ liệu(PDF) 26 Page - STMicroelectronics |
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ST1CC40DR bảng dữ liệu(HTML) 26 Page - STMicroelectronics |
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26 / 37 page ![]() Application information ST1CC40 26/37 DocID18279 Rev 5 The overall losses are: Equation 32 Equation 33 The junction temperature of the device is: Equation 34 where TA is the ambient temperature and RthJ-A is the thermal resistance junction-to- ambient. The junction-to-ambient (RthJ-A) thermal resistance of the device assembled in HSO8 package and mounted on the board is about 40 °C/W. Assuming the ambient temperature is around 40 °C, the estimated junction temperature is: Equation 35 7.4 Short-circuit protection In overcurrent protection mode, when the peak current reaches the current limit threshold, the device disables the power element and it is able to reduce the conduction time down to the minimum value (approximately 100 nsec typ.) to keep the inductor current limited. This is the pulse-by-pulse current limitation to implement the constant current protection feature. In overcurrent condition, the duty cycle is strongly reduced and, in most applications, this is enough to limit the switch current to the current threshold. The inductor current ripple during ON and OFF phases can be written as: ON phase Equation 36 OFF phase Equation 37 where DCRL is the series resistance of the inductor. PTOT RDS(on)_HS IOUT 2 DR DS(on)_LS IOUT 2 1D – VIN IOUT fSW TSW VIN IQ ++ + = PTOT 0,14 0,7 2 0,6 0,1 0,72 0,4 12 + 0,7 12 10 9 – 850 10 3 12 1,5 10 3 – + + 205mW = TJ TA RthJA – PTOT + = TJ 60 0,205 40 68 C + = IL TON VIN VOUT – DCRL RDS(on) HS + I – L ------------------------------------------------------------------------------------------------- TON = IL TON VOUT DCRL RDS(on) LS + I + – L ----------------------------------------------------------------------------------------- TOFF = |
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