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IXTL2N450 bảng dữ liệu(PDF) 2 Page - IXYS Corporation

tên linh kiện IXTL2N450
Giải thích chi tiết về linh kiện  Preliminary Technical Information
PDF  5 Pages
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nhà sản xuất  IXYS [IXYS Corporation]
Trang chủ  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTL2N450 bảng dữ liệu(HTML) 2 Page - IXYS Corporation

  IXTL2N450 Datasheet HTML 1Page - IXYS Corporation IXTL2N450 Datasheet HTML 2Page - IXYS Corporation IXTL2N450 Datasheet HTML 3Page - IXYS Corporation IXTL2N450 Datasheet HTML 4Page - IXYS Corporation IXTL2N450 Datasheet HTML 5Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTL2N450
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS = 60V, ID = 0.5 • ID25, Note 1
1.3
2.2
S
C
iss
6900
pF
C
oss
V
GS = 0V, VDS = 25V, f = 1MHz
264
pF
C
rss
88
pF
R
Gi
Integrated Gate Input Resistance
3.0
Ω
t
d(on)
44
ns
t
r
38
ns
t
d(off)
100
ns
t
f
205
ns
Q
g(on)
156
nC
Q
gs
V
GS = 10V, VDS = 1kV, ID = 0.5 • ID25
38
nC
Q
gd
67
nC
R
thJC
0.56
°C/W
R
thCS
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
I
S
V
GS = 0V
2
A
I
SM
Repetitive, Pulse Width Limited by T
JM
8
A
V
SD
I
F = IS, VGS = 0V, Note 1
3
V
t
rr
I
F = 2A, -di/dt = 100A/μs, VR = 100V
1.75
μs
ISOPLUS i5-PakTM (IXTL) Outline
1 = Gate
2 = Source
3 = Drain
4 = Isolated
SYM
INCHES
MILLIMETER
MIN
MAX
MIN
MAX
A
0.190
0.205
4.83
5.21
A1
0.102
0.118
2.59
3.00
A2
0.046
0.055
1.17
1.40
b
0.045
0.055
1.14
1.40
b1
0.063
0.072
1.60
1.83
b2
0.058
0.068
1.47
1.73
c
0.020
0.029
0.51
0.74
D
1.020
1.040
25.91
26.42
E
0.770
0.799
19.56
20.29
e
0.150 BSC
3.81 BSC
e1
0.450 BSC
11.43 BSC
L
0.780
0.820
19.81
20.83
L1
0.080
0.102
2.03
2.59
Q
0.210
0.235
5.33
5.97
Q1
0.490
0.513
12.45
13.03
R
0.150
0.180
3.81
4.57
R1
0.100
0.130
2.54
3.30
S
0.668
0.690
16.97
17.53
T
0.801
0.821
20.34
20.85
U
0.065
0.080
1.65
2.03
Notes: 1. Pulse test, t
≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Idss measurement.
Resistive Switching Times
V
GS = 10V, VDS = 1kV, ID = 1A
R
G = 0Ω (External)
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.



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