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STM32F030x4 bảng dữ liệu(PDF) 56 Page - STMicroelectronics

tên linh kiện STM32F030x4
Giải thích chi tiết về linh kiện  Value-line ARM-based 32-bit MCU with 16 to 64-KB Flash, timers, ADC, communication interfaces, 2.4-3.6 V operation
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Electrical characteristics
STM32F030x4 STM32F030x6 STM32F030x8
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DocID024849 Rev 1
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
6.3.12
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 40. EMI characteristics
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/48 MHz
SEMI
Peak level
VDD 3.6 V, TA 25 °C,
LQFP64 package
compliant with IEC
61967-2
0.1 to 30 MHz
-3
dBµV
30 to 130 MHz
28
130 MHz to 1GHz
23
SAE EMI Level
4
-
Table 41. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1. Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA +25 °C, conforming
to JESD22-A114
22000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
TA +25 °C, conforming
to JESD22-C101
II
500
Table 42. Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA +105 °C conforming to JESD78A
II level A



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