MRF166W

2

MOTOROLA RF DEVICE DATA

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 5.0 mA)

V(BR)DSS

65

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

—

1.0

mA

Gate–Source Leakage Current

(VGS = 40 Vdc, VDS = 0 Vdc)

IGSS

—

—

1.0

µA

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS= 10 Vdc, ID = 25 mA)

VGS(th)

1.0

3.0

6.0

Vdc

Forward Transconductance

(VDS= 10 Vdc, ID = 1.5 A)

gfs

600

800

—

mS

DYNAMIC CHARACTERISTICS (1)

Input Capacitance

(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Ciss

—

30

—

pF

Output Capacitance

(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Coss

—

35

—

pF

Reverse Transfer Capacitance

(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Crss

—

4.5

—

pF

FUNCTIONAL CHARACTERISTICS (2)

Common Source Power Gain

(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA)

Gps

11

13

—

dB

Drain Efficiency

(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA)

η

45

50

—

%

Electrical Ruggedness

(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA)

Load VSWR = 30:1, All phase angles at frequency of test

Ψ

No Degradation in Output Power

(1) Each transistor chip measured separately.

(2) Both transistor chips operating in a push–pull amplifier.