91034 datasheet(2/9 Pages) VISHAY

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Document Number: 91034

S11-0509-B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF634, SiHF634

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

-1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

250

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

0.37

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 250 V, VGS = 0 V

μA

VDS = 200 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 5.1 Ab

0.45



Forward Transconductance

gfs

VDS = 50 V, ID = 5.1 Ab

1.6

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

770

Output Capacitance

Coss

190

Reverse Transfer Capacitance

Crss

-52

Total Gate Charge

VGS = 10 V

ID = 5.6 A, VDS = 200 V,

see fig. 6 and 13b

Gate-Source Charge

Qgs

6.5

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 125 V, ID = 5.6 A,

Rg = 12 , RD = 22, see fig. 10b

-9.6

Rise Time

-21

Turn-Off Delay Time

td(off)

-42

Fall Time

-19

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

Internal Source Inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

8.1

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 8.1 A, VGS = 0 Vb

2.0

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb

220

440

Body Diode Reverse Recovery Charge

Qrr

-1.2

2.4

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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