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VNQ660SPTR-E bảng dữ liệu(PDF) 16 Page - STMicroelectronics |
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VNQ660SPTR-E bảng dữ liệu(HTML) 16 Page - STMicroelectronics |
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16 / 26 page ![]() Application information VNQ660SP 16/26 3 Application information Figure 23. Application schematic Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2. 3.1 GND protection network against reverse battery This section provides two solutions for implementing a ground protection network against reverse battery. 3.1.1 Solution 1: a resistor in the ground line (RGND only) This can be used with any type of load. The following show how to dimension the RGND resistor: 1. RGND ≤600mV / 2 (IS(on)max) 2. RGND ≥ ( - VCC) / ( - IGND) where - IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet. Power dissipation in RGND (when VCC < 0 during reverse battery situations) is: PD = ( - VCC) 2/ R GND VCC Dld +5V Rprot STATUS INPUT1 +5V OUTPUT3 OUTPUT1 OUTPUT2 OUTPUT4 INPUT3 INPUT4 Rprot Rprot Rprot Rprot INPUT2 µC GND DGND RGND VGND . |
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