STF10NM50N datasheet(3/18 Pages) STMICROELECTRONICS

3 / 18 page

STD10NM50N, STF10NM50N, STP10NM50N

Electrical ratings

Doc ID 16929 Rev 3

3/18

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK, TO-220

TO-220FP

VDS

Drain-source voltage

500

VGS

Gate- source voltage

± 25

Drain current (continuous) at TC = 25 °C

7 (1)

Limited by maximum junction temperature.

Drain current (continuous) at TC = 100 °C

5 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

28 (1)

PTOT

Total dissipation at TC = 25 °C

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

2500

dv/dt (3)

ISD ≤ 7 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDSpeak ≤V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

DPAK

TO-220 TO-220FP

Rthj-case

Thermal resistance junction-case max

1.79

°C/W

Rthj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb minimum

footprint

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

143

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