PMEG6002EB115 datasheet(4/10 Pages) NXP

tên linh kiện	PMEG6002EB115

Giải thích chi tiết về linh kiện	Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in ultra small and flat lead Surface-Mounted Device (SMD) plastic packages

PDF	10 Pages

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nhà sản xuất	NXP [NXP Semiconductors]

Trang chủ	http://www.nxp.com

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4 / 10 page

PMEG6002EB_PMEG6002TV_1

Product data sheet

Rev. 01 — 24 November 2006

4 of 10

NXP Semiconductors

PMEG6002EB; PMEG6002TV

0.2 A very low VF MEGA Schottky barrier rectiﬁers

Thermal characteristics

[1]

For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses PR are a signiﬁcant part of the total power losses.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[4]

Soldering point of cathode tab.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

PMEG6002EB

[1][2] -

400

K/W

PMEG6002TV

[1][2] -

416

K/W

[1][3] -

318

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

[4]

PMEG6002EB

K/W

PMEG6002TV

195

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per diode

forward voltage

[1]

IF = 0.1 mA

130

170

IF = 1 mA

190

230

IF = 10 mA

260

300

IF = 100 mA

420

470

IF = 200 mA

540

600

reverse current

VR =10V

µA

VR = 60 V

100

µA

VR = 10 V; Tamb = 100 °C

310

µA

diode capacitance

VR = 1 V; f = 1 MHz

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