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STM32F373C8 bảng dữ liệu(PDF) 77 Page - STMicroelectronics

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STM32F37x
Electrical characteristics
Doc ID 022691 Rev 3
77/128
6.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
1.
Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
2.
Guaranteed by design, not tested in production.
Table 45.
Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1.
Guaranteed by design, not tested in production.
Unit
tprog
16-bit programming time
TA–40 to +105 °C
40
53.5
60
µs
tERASE Page (2 kB) erase time
TA –40 to +105 °C
20
40
ms
tME
Mass erase time
TA –40 to +105 °C
20
40
ms
IDD
Supply current
Write mode
10
mA
Erase mode
12
mA
Table 46.
Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Data based on characterization results, not tested in production.
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2.
Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20



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