T8T datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

T8T

Characteristics

Doc ID 16192 Rev 3

3/9

Table 3.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

T8xxT

Unit

T810T

T820T

T825T

T835T

IGT

(1)

VD = 12 V, RL = 30 Ω

I - II - III

MAX.

VGT

VD = VDRM, RL = 30 Ω,

Tj = 25 °C

ALL

MAX.

1.3

VGD

VD = VDRM, RL = 3.3 kΩ,

Tj = 125 °C

ALL

MIN.

0.2

(2)

IT = 500 mA

MAX.

IG = 1.2 IGT

I - III

MAX.

dV/dt (2)

VD = 67% VDRM, gate open

Tj = 125 °C

MIN.

100

750

500

2000

V/µs

Tj = 150 °C

(3)

500

300

1000

(di/dt)c (2)

(dV/dt)c = 0.1 V/µs

Tj = 125 °C

MIN.

5.4

A/ms

(dV/dt)c = 10 V/µs

4.5

Without snubber

3.4

(dV/dt)c = 0.1 V/µs

Tj = 150 °C

(3)

2.5

(dV/dt)c = 10 V/µs

Without snubber

6.5

Minimum IGT is guaranted at 5% of IGT max.

For both polarities of A2 referenced to A1.

Derating information for excess temperature above Tj max.

Table 4.

Static characteristics

Symbol

Test conditions

Value

Unit

(1)

ITM = 11.3 A, tp = 380 µs

Tj = 25 °C

MAX.

1.60

VTO

(1)

Threshold voltage

Tj = 125 °C

MAX.

0.87

(1)

Dynamic resistance

Tj = 125 °C

MAX.

IDRM

IRRM

VDRM = VRRM

Tj = 25 °C

MAX.

5µA

Tj = 125 °C

VD = 0.9 x VDRM

Tj = 150 °C

(2)

TYP.

1.9

For both polarities of A2 referenced to A1.

Derating information for excess temperature above Tj max.

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