M68ICS08GR datasheet(160/408 Pages) FREESCALE

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Flash Memory

Technical Data

MC68HC908GR8 — Rev 4.0

160

Flash Memory

MOTOROLA

PGM — Program Control Bit

This read/write bit configures the memory for program operation.

PGM is interlocked with the ERASE bit such that both bits cannot be

equal to 1 or set to 1 at the same time.

1 = Program operation selected

0 = Program operation unselected

11.5 FLASH Page Erase Operation

Use this step-by-step procedure to erase a page (64 bytes) of FLASH

memory to read as logic 1:

1. Set the ERASE bit, and clear the MASS bit in the FLASH control

2. Read the FLASH block protect register.

3. Write any data to any FLASH address within the page address

range desired.

4. Wait for a time, tnvs (min. 10µs)

5. Set the HVEN bit.

6. Wait for a time, tErase (min. 1ms)

7. Clear the ERASE bit.

8. Wait for a time, tnvh (min. 5µs)

9. Clear the HVEN bit.

10. After a time, trcv (typ. 1µs), the memory can be accessed again in

read mode.

NOTE:

While these operations must be performed in the order shown, other

unrelated operations may occur between the steps.

Freescale Semiconductor, Inc.

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