IPA65R190C6 datasheet(2/19 Pages) INFINEON

2 / 19 page

drain

pin 2

gate

pin 1

source

pin 3

650V CoolMOS™ C6 Power Transistor

IPA65R190C6, IPB65R190C6

IPI65R190C6, IPP65R190C6

IPW65R190C6

Final Data Sheet

Rev. 2.0, 2011-05-09

Description

CoolMOS™ is a revolutionary technology for high voltage power

MOSFETs, designed according to the superjunction (SJ) principle

and pioneered by Infineon Technologies. CoolMOS™ C6 series

combines the experience of the leading SJ MOSFET supplier with

high class innovation. The offered devices provide all benefits of a

fast switching SJ MOSFET while not sacrificing ease of use.

Extremely low switching and conduction losses make switching

applications even more efficient, more compact, lighter, and cooler.

Features

•

Extremely low losses due to very low FOM Rdson*Qg and Eoss

•

Very high commutation ruggedness

•

Easy to use/drive

•

JEDEC

1) qualified, Pb-free plating, Halogen free

Applications

PFC stages, hard switching PWM stages and resonant switching

PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

Lighting, Server, Telecom and UPS.

Please note: For MOSFET paralleling the use of ferrite beads on

the gate or separate totem poles is generally recommended.

1) J-STD20 and JESD22

Table 1

Key Performance Parameters

Parameter

Value

Unit

DS @ Tj,max

700

DS(on),max

0.19



g,typ

D,pulse

oss @ 400V

5.9

µJ

Body diode d

i/dt

500

A/µs

Type / Ordering Code

Package

Marking

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