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Revision 3.7

ATP Industrial Grade SD Card Specification

2.2 Reliability

TYPE

MEASUREMENT

Number of insertions

10,000 minimum

Endurance Technology

SLC NAND Flash block endurance:

512MB / 2GB / 4GB / 8GB: 60,000 P/E cycles

1GB: 100,000 P/E cycles

Global Wear Leveling algorithm

TBW

(Total Bytes Written)

512MB

6.1

Terabytes random write

12.3

Terabytes sequential write

1GB

Terabytes random write

Terabytes sequential write

2GB

Terabytes random write

Terabytes sequential write

4GB

Terabytes random write

Terabytes sequential write

8GB

Terabytes random write

192

Terabytes sequential write

MTBF(@ 25

oC)

>2,000,000 hours

Table 2-2: Reliability

Note: Endurance for flash cards can be predicted based on the usage conditions applied to the device, the internal NAND

flash cycles, the write amplification factor, and the wear leveling efficiency of the flash devices.

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