IXTH75N15 datasheet(4/5 Pages) IXYS

tên linh kiện	IXTH75N15

Giải thích chi tiết về linh kiện	High Current Power MOSFET N-Channel Enhancement Mode

PDF	5 Pages

Scroll/Zoom	100%

nhà sản xuất	IXYS [IXYS Corporation]

Trang chủ	http://www.ixys.com

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4 / 5 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by

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4,881,106

5,017,508

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6,683,344

one or moreof the following U.S. patents:

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6,710,405B2

Fig. 11. Capacitance

100

1000

10000

D S - Volts

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

100 120 140 160

180

G - nanoCoulombs

VDS = 75V

ID = 37.5A

IG = 10mA

Fig. 7. Input Adm ittance

100

120

140

160

180

3.5

4.5

5.5

6.5

7.5

G S - V olts

TJ = 125ºC

25ºC

-40ºC

Fig. 8. Transconductance

120

150

180

D - A mperes

TJ = -40ºC

25ºC

125ºC

Fig. 9. Source Current vs. Source-To-

Drain Voltage

100

120

140

160

180

200

0.4

0.6

0.8

1.2

1.4

1.6

1.8

S D - V olts

TJ = 125ºC

TJ = 25ºC

Fig. 12. Forw ard-Bias

Safe Operating Area

100

1000

100

1000

VD S - Volts

100µs

1ms

J = 150ºC

C = 25ºC

DS(on) Limit

10ms

25µs

IXTH 75N15

IXTT 75N15

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