2

Rc

RFC

RF

input

RF

output

3Tx

Typical Biasing Configuration

Notes:

1. Typical value determined from a sample size of 500 parts from 3 wafers.

2. Measurement obtained using production test board described in the block diagram below.

3. i) 100 MHz OIP3 Test Condition: F1 = 100 MHz, F2 = 105 MHz, Pin = -20 dBm per tone.

ii)900 MHz OIP3 Test Condition: F1 = 900 MHz, F2 = 905 MHz, Pin = -20 dBm per tone.

iii) 2000 MHz OIP3 Test Condition: F1 = 2000 MHz, F2 = 2005 MHz, Pin = -20 dBm per tone.

Table 2. Electrical Specifications at Tc = +25°C

Symbol

Parameter

Unit

MaxRating

Device Current

mA

90

mW

370

RF Input Power

dBm

20

Junction Temperature

150

Storage Temperature

-65 to 150

50

Symbol

Parameter and Test Condition:Id = 60mA, Zo = 50

W

Frequency

Units

Min.

Typ.

Max.

Device Voltage

V

3.3

3.8

4.3

Power Gain

100 MHz

2.0 GHz

dB

15

16.9

16.5

16.2

18

Gain Flatness

100 to 900 MHz

0.1 to 2.0 GHz

dB

0.3

0.5

F3dB

3dB Bandwidth

GHz

4

Input Voltage Standing Wave Ratio

0.1 to 4.0 GHz

1.3:1

Output Voltage Standing Wave Ratio

0.1 to 4.0 GHz

1.5:1

NF

50

W Noise Figure

100 MHz

2.0 GHz

dB

4.1

4.2

4.4

P1dB

Output Power at 1dB Gain Compression

100 MHz

2.0 GHz

dBm

16.0

17.7

17.1

16.2

OIP3

Output Third Order Intercept Point

dBm

27

33.4

32.6

28.8

dV/dT

Device Voltage Temperature Coefficient

-4.9

Notes:

1. Operation in excess of any one of these conditions may result in

permanent damage to the device.

2. Ground lead temperature is 25°C. Derate 20 mW/°C for Tc > 131.5

°C.

3. Thermal Resistance is measured from junction to board using IR

method.