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LMZ14202HTZX/NOPB bảng dữ liệu(PDF) 3 Page - Texas Instruments |
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LMZ14202HTZX/NOPB bảng dữ liệu(HTML) 3 Page - Texas Instruments |
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3 / 28 page ![]() Exposed Pad Connect to GND 5 SS 6 FB 3 EN 1 VIN 2 RON 4 GND 7 VOUT VIN CIN VIN RON RFBT CFF CSS RFBB COUT LMZ14202H VOUT 10 PF 4700 pF 0.022 PF * RENT * RENB * See equation 1 to calculate values VOUT RFBT RFBB RON COUT COUT-ESR VIN 12V 34 k: 2.43 k: 249 k: 47 PF 1-75 m: 15 - 42V 15V 34 k: 1.91 k: 287 k: 47 PF 1-65 m: 18 - 42V 18V 34 k: 1.58 k: 374 k: 33 PF 1-60 m: 22 - 42V 24V 34 k: 1.18 k: 499 k: 33 PF 1-60 m: 28 - 42V 30V 34 k: 931: 619 k: 33 PF 1-75 m: 34 - 42V 5V 34 k: 6.49 k: 100 k: 100 PF 1-145 m: 8 - 42V LMZ14202H www.ti.com SNVS691D – JANUARY 2011 – REVISED FEBRUARY 2013 Simplified Application Schematic Connection Diagram Figure 2. Top View 7-Lead PFM PIN DESCRIPTIONS Pin Name Description 1 VIN Supply input — Additional external input capacitance is required between this pin and the exposed pad (EP). 2 RON On time resistor — An external resistor from VIN to this pin sets the on-time and frequency of the application. Typical values range from 100k to 700k ohms. 3 EN Enable — Input to the precision enable comparator. Rising threshold is 1.18V. 4 GND Ground — Reference point for all stated voltages. Must be externally connected to EP. 5 SS Soft-Start — An internal 8 µA current source charges an external capacitor to produce the soft-start function. 6 FB Feedback — Internally connected to the regulation, over-voltage, and short-circuit comparators. The regulation reference point is 0.8V at this input pin. Connect the feedback resistor divider between the output and ground to set the output voltage. 7 VOUT Output Voltage — Output from the internal inductor. Connect the output capacitor between this pin and the EP. EP EP Exposed Pad — Internally connected to pin 4. Used to dissipate heat from the package during operation. Must be electrically connected to pin 4 external to the package. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Copyright © 2011–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LMZ14202H |
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