LM4880

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SNAS103C – NOVEMBER 1995 – REVISED MAY 2013

much smaller than the LM4880 GBWP of 12.5 MHz. This figure displays that if a designer has a need top design

an amplifier with a higher gain, the LM4880 can still be used without running into bandwidth limitations.

LM4880 MDA MWA

DUAL 250 MW AUDIO POWER AMPLIFIER WITH SHUTDOWN MODE

Figure 35. Die Layout (B - Step)

Table 1. Die/Wafer Characteristics

Fabrication Attributes

General Die Information

Physical Die Identification

LM4880B

Bond Pad Opening Size (min)

86µm x 86µm

Die Step

B

Bond Pad Metalization

ALUMINUM

Physical Attributes

Passivation

NITRIDE

Wafer Diameter

150mm

Back Side Metal

Bare Back

Dise Size (Drawn)

952µm x 1283µm

Back Side Connection

GND

37mils x 51mils

Thickness

254µm Nominal

Min Pitch

117µm Nominal

Special Assembly Requirements:

Note: Actual die size is rounded to the nearest micron.

Die Bond Pad Coordinate Locations (B - Step)

(Referenced to die center, coordinates in µm) NC = No Connection

X/Y COORDINATES

PAD SIZE

SIGNAL NAME

PAD# NUMBER

X

Y

X

Y

BYPASS

1

-322

523

86

x

86

GND

2

-359

259

86

x

188

NC

3

-359

5

86

x

86

GND

4

-359

-259

86

x

188

SHUTDOWN

5

-323

-523

86

x

86

INPUT B

6

-109

-523

86

x

86

OUTPUT B

7

8

-523

86

x

86

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