DocID023758 Rev 4

5/12

STN3P6F6

Electrical characteristics

Note:

For the P-channel Power MOSFET actual polarity of voltages and current has to be

reversed.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

(1)

1. Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-

3

12

A

A

(2)

2. Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.1

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

(see Figure 15)

-

20

17.8

1.8

ns

nC

A