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MTD6501G bảng dữ liệu(PDF) 5 Page - Microchip Technology |
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MTD6501G bảng dữ liệu(HTML) 5 Page - Microchip Technology |
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5 / 24 page ![]() 2010-2012 Microchip Technology Inc. DS22263B-page 5 MTD6501C/D/G 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Power Supply Voltage (VCC_MAX) .................... -0.7 to +15.3V Maximum OUT1, 2, 3 Output Voltage (VOUT_MAX) ................. ................................................................ -0.7 to +15.3V+0.7V FG Maximum Output Voltage (VFG_MAX) ......... -0.7 to +15.3V Maximum Output Current(3,4) (IOUT_MAX)....................800 mA Maximum Output Current(3,5) (IOUT_MAX)....................500 mA FG Maximum Output Voltage (VFG_MAX) ......... -0.7 to +15.3V FG Maximum Output Current (IFG_MAX).....................5.0 mA VDD Maximum Voltage (VDD_MAX) ..................... -0.7 to +4.0V PWM Maximum Voltage (VPWM_MAX) ................ -0.7 to +4.0V Allowable Power Dissipation(1,2,4)(PD_MAX).....................1.0W Allowable Power Dissipation(1,2,5)(PD_MAX).....................0.5W Max Junction Temperature (TJ)....................................+150°C † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Note 1: Reference PCB, according to JEDEC standard EIA/JESD 51-9. 2: Derating applies for ambient temperatures outside the specified operating range (refer to Figure 1-1). 3: OUT1, OUT2, OUT3 (Continuous, 100% duty cycle). 4: MTD6501C and MTD6501G 5: MTD6501D ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise specified, all limits are established for VCC = 5.0V, TA = +25°C Parameters Sym. Min. Typ. Max. Units Conditions Power Supply Voltage VCC 2— 14 V Power Supply Current IVCC — 10 — mA Rotation Mode 5 Lock-Protection Mode OUTx High Resistance RON(H) —0.75 1 Ω IOUT = 0.5A, VCC = 3.3V to 14V OUTx Low Resistance RON(L) —0.75 1 Ω IOUT = -0.5A, VCC = 3.3V to 14V OUTx Total Resistance RON(H+L) —1.5 2 Ω IOUT = 0.5A, VCC = 3.3V to 14V VDD Output Voltage VDD —3 — V VCC = 3.3V to 14V VCC – 0.2 V VCC < 3.3V PWM Input Frequency fPWM 0.02 — 100 kHz — PWM Input H Level VPWM_H 0.8*VDD —3.6 V — PWM Input L Level VPWM_L 0— 0.2*VDD V— PWM Internal Pull-Up Current IPWM_L 17 34 — µA PWM = GND, VCC = 3.3V to 14V 817 — µA PWM = GND, VCC < 3.3V PWM Output Frequency fPWM_O —20 — kHz MTD6501C and MTD6501D 23 kHz MTD6501G FG Output Pin Low Level Voltage VOL_FG —— 0.25 V IFG = -1 mA FG Output Pin Leakage Current ILH_FG —— 10 µA VFG = 14V Lock Protection Operating Time TRUN —0.5 — s — Lock Protection Waiting Time TWAIT 4.5 5 5.5 s — Thermal Shutdown TSD —170 — °C — Thermal Shutdown Hysteresis TSD_HYS —25 — °C — |
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