25XX080C/D

DS22151B-page 2

 2009-2012 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias ...............................................................................................................-40°C to 125°C

ESD protection on all pins ..........................................................................................................................................4 kV

TABLE 1-1:

DC CHARACTERISTICS

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

DC CHARACTERISTICS

Industrial (I):

Param.

No.

Sym.

Characteristic

Min.

Max.

Units

Test Conditions

D001

High-level input

voltage

V

—

D002

Low-level input

voltage

-0.3

2.7V

D003

-0.3

D004

Low-level output

voltage

—0.4

V

D005

—0.2

V

D006

High-level output

voltage

—

V

A

D007

Input leakage current

±1

D008

Output leakage

current

±1

D009

Internal Capacitance

(all inputs and

outputs)

—7

pF

D010

Operating Current

—

—

5

2.5

mA

mA

SO = Open

SO = Open

D011

—

—

5

3

mA

mA

D012

Iccs

Standby Current

—

—

5

1

A

A

Note:

This parameter is periodically sampled and not 100% tested.