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TC642B bảng dữ liệu(PDF) 21 Page - Microchip Technology |
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TC642B bảng dữ liệu(HTML) 21 Page - Microchip Technology |
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21 / 36 page ![]() 2002-2013 Microchip Technology Inc. DS21756C-page 21 TC642B/TC647B FIGURE 5-7: Output Drive Device Configurations. TABLE 5-2: FAN DRIVE DEVICE SELECTION TABLE (NOTE 2) 5.6 Bias Supply Bypassing and Noise Filtering The bias supply (VDD) for the TC642B/TC647B devices should be bypassed with a 1.0 F ceramic capacitor. This capacitor will help supply the peak currents that are required to drive the base/gate of the external fan drive devices. As the VIN pin controls the duty cycle in a linear fashion, any noise on this pin can cause duty-cycle jittering. For this reason, the VIN pin should be bypassed with a 0.01 µF capacitor. In order to keep fan noise off of the TC642B/TC647B device ground, individual ground returns for the TC642B/TC647B and the low side of the fan current sense resistor should be used. 5.7 Design Example/Typical Application The system has been designed with the following components and criteria. System inlet air ambient temperature ranges from 0ºC to 50ºC. At 20ºC and below, it is desired to have the system cooling stay at a constant level. At 20ºC, the fan should be run at 40% of its full fan speed. Full fan speed should be reached when the ambient air is 40ºC. The system has a surface mount, NTC-style thermistor in a 1206 package. The thermistor is mounted on a daughtercard, which is directly in the inlet air stream. The thermistor is a NTC, 100 k @ 25ºC, Thermomet- rics® part number NHQ104B425R5. The given Beta for the thermistor is 4250. The system bias voltage to run the fan controller is 5V and the fan voltage is 12V. Device Package Max Vbe sat / Vgs(V) Min hfe VCE/VDS (V) Fan Current (mA) Suggested Rbase ( ) MMBT2222A SOT-23 1.2 50 40 150 800 MPS2222A TO-92 1.2 50 40 150 800 MPS6602 TO-92 1.2 50 40 500 301 SI2302 SOT-23 2.5 NA 20 500 Note 1 MGSF1N02E SOT-23 2.5 NA 20 500 Note 1 SI4410 SO-8 4.5 NA 30 1000 Note 1 SI2308 SOT-23 4.5 NA 60 500 Note 1 Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times. 2: These drive devices are suggestions only. Fan currents listed are for individual fans. Q1 GND Fan Bias RSENSE RBASE VOUT FAN a) Single Bipolar Transistor Q1 GND Fan Bias RSENSE VOUT b) N-Channel MOSFET FAN |
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