16C84 datasheet(71/110 Pages) MICROCHIP

71 / 110 page

PIC16C84

 1996-2013 Microchip Technology Inc.

DS30445D-page 71

11.0

ELECTRICAL CHARACTERISTICS FOR PIC16C84

Absolute Maximum Ratings †

Ambient temperature under bias............................................................................................................. -55

C to +125C

Storage temperature .............................................................................................................................. -65

C to +150C

Voltage on VDD with respect to VSS ............................................................................................................. -0.3 to +7.5V

Voltage on MCLR with respect to VSS(2) .......................................................................................................-0.3 to +14V

Voltage on all other pins with respect to VSS .................................................................................. -0.6V to (VDD + 0.6V)

Total power dissipation(1) ..................................................................................................................................... 800 mW

Maximum current out of VSS pin ........................................................................................................................... 150 mA

Maximum current into VDD pin .............................................................................................................................. 100 mA

Input clamp current, IIK (VI < 0 or VI > VDD)

 20 mA

Output clamp current, IOK (VO < 0 or VO >VDD)

 20 mA

Maximum output current sunk by any I/O pin..........................................................................................................25 mA

Maximum output current sourced by any I/O pin .................................................................................................... 20 mA

Maximum current sunk by

PORTA ..........................................................................................................................80 mA

Maximum current sourced by PORTA ..................................................................................................................... 50 mA

Maximum current sunk by PORTB........................................................................................................................ 150 mA

Maximum current sourced by PORTB................................................................................................................... 100 mA

Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD -

 IOH} +  {(VDD-VOH) x IOH} + (VOl x IOL)

Note 2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus,

a series resistor of 50-100

 should be used when applying a “low” level to the MCLR pin rather than pulling

this pin directly to VSS.

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

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