MCP4531 datasheet(3/102 Pages) MICROCHIP

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 2008-2013 Microchip Technology Inc.

DS22107B-page 3

MCP454X/456X/464X/466X

1.0

ELECTRICAL CHARACTERISTICS

1.1

Absolute Maximum Ratings†

Voltage on VDD with respect to VSS ........................................................................................................... -0.6V to +7.0V

Voltage on HVC/A0, A1, A2, SCL, SDA and WP with respect to VSS ....................................................... -0.6V to 12.5V

Voltage on all other pins (PxA, PxW, and PxB) with respect to VSS ..................................................-0.3V to VDD + 0.3V

Input clamp current, IIK (VI < 0, VI > VDD, VI > VPP ON HV pins)...........................................................................±20 mA

Output clamp current, IOK (VO < 0 or VO > VDD) ..................................................................................................±20 mA

Maximum output current sunk by any Output pin.................................................................................................... 25 mA

Maximum output current sourced by any Output pin ............................................................................................. 25 mA

Maximum current out of VSS pin ...........................................................................................................................100 mA

Maximum current into VDD pin ..............................................................................................................................100 mA

Maximum current into PXA, PXW & PXB pins ...................................................................................................... ±2.5 mA

Storage temperature ............................................................................................................................... -65°C to +150°C

Ambient temperature with power applied................................................................................................-40°C to +125°C

Package power dissipation (TA = +50°C, TJ = +150°C)

MSSOP-8 ....................................................................................................................................................... 473 mW

MSSOP-10 ..................................................................................................................................................... 495 mW

DFN-8 (3x3) ......................................................................................................................................................1.76W

DFN-10 (3x3) .................................................................................................................................................... 1.87W

TSSOP-14......................................................................................................................................................... 1.00W

QFN-16 (4x4) .................................................................................................................................................... 2.18W

Soldering temperature of leads (10 seconds) ....................................................................................................... +300°C

ESD protection on all pins

4 kV (HBM),

300V (MM)

Maximum Junction Temperature (TJ) ................................................................................................................... +150°C

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only and functional operation of the device at those or any other conditions above those indicated in

the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended peri-

ods may affect device reliability.

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