IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA130N10T

IXTP130N10T

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

55

93

S

C

iss

5080

pF

C

oss

V

635

pF

C

rss

95

pF

t

d(on)

Resistive Switching Times

30

ns

t

r

V

47

ns

t

d(off)

R

44

ns

t

f

28

ns

Q

g(on)

104

nC

Q

gs

V

30

nC

Q

gd

29

nC

R

thJC

0.42

°C/W

R

thCH

TO-220

0.50

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

T

Min.

Typ.

Max.

I

S

V

130

A

I

SM

Pulse width limited by T

JM

350

A

V

SD

I

1.0

V

t

rr

67

ns

I

RM

4.7

A

Q

rr

160

nC

2. On through-hole packages, R

location must be 5 mm or less from the package body.

TO-263 (IXTA) Outline

Pins: 1 - Gate

2 - Drain

3 - Source 4, TAB - Drain

Pins: 1 - Gate

2 - Drain

3 - Source 4, TAB - Drain

TO-220 (IXTP) Outline

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79

.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

7.11

8.13

.280

.320

E

9.65

10.29

.380

.405

E1

6.86

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.38

0

.015

R

0.46

0.74

.018

.029

I

V