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FDI3652 bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor

tên linh kiện FDI3652
Giải thích chi tiết về linh kiện  N-Channel PowerTrench MOSFET 100V, 61A, 16m?
PDF  11 Pages
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nhà sản xuất  FAIRCHILD [Fairchild Semiconductor]
Trang chủ  http://www.fairchildsemi.com
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FDI3652 bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
FDB3652 / FDP3652 / FDI3652 Rev. B
Package Marking and Ordering Information
Electrical Characteristics T
C = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics (V
GS = 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting TJ = 25°C, L = 0.228mH, IAS = 40A.
2: Pulse Width = 100s
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB3652
FDB3652
TO-263AB
330mm
24mm
800 units
FDP3652
FDP3652
TO-220AB
Tube
N/A
50 units
FDI3652
FDI3652
TO-262AA
Tube
N/A
50 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
105
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS = 80V
-
-
1
µA
VGS = 0V
TC= 150
oC-
-
250
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
±100
nA
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA2
-
4
V
rDS(ON)
Drain to Source On Resistance
ID = 61A, VGS = 10V
-
0.014
0.016
Ω
ID = 30A, VGS = 6V
-
0.018
0.026
ID = 61A, VGS = 10V,
TJ = 175
oC
-
0.035
0.043
CISS
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
-
2880
-
pF
COSS
Output Capacitance
-
390
-
pF
CRSS
Reverse Transfer Capacitance
-
100
-
pF
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
VDD = 50V
ID = 61A
Ig = 1.0mA
41
53
nC
Qg(TH)
Threshold Gate Charge
VGS = 0V to 2V
-
5
6.5
nC
Qgs
Gate to Source Gate Charge
-
15
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
10
-
nC
Qgd
Gate to Drain “Miller” Charge
-
10
-
nC
tON
Turn-On Time
VDD = 50V, ID = 61A
VGS = 10V, RGS = 6.8Ω
--
146
ns
td(ON)
Turn-On Delay Time
-
12
-
ns
tr
Rise Time
-
85
-
ns
td(OFF)
Turn-Off Delay Time
-
26
-
ns
tf
Fall Time
-
45
-
ns
tOFF
Turn-Off Time
-
-
107
ns
VSD
Source to Drain Diode Voltage
ISD = 61A
-
-
1.25
V
ISD = 30A
-
-
1.0
V
trr
Reverse Recovery Time
ISD = 61A, dISD/dt = 100A/µs-
-
62
ns
QRR
Reverse Recovered Charge
ISD = 61A, dISD/dt = 100A/µs-
-
45
nC



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