BLF2425M7LS140 datasheet(3/11 Pages) NXP

3 / 11 page

BLF2425M7L140; BLF2425M7LS140

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Product data sheet

Rev. 3 — 6 September 2012

3 of 11

NXP Semiconductors

BLF2425M7L(S)140

Power LDMOS transistor

Characteristics

Test information

7.1 Ruggedness in class-AB operation

The BLF2425M7L140 and BLF2425M7LS140 are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

conditions: VDS =28 V; IDq = 1300 mA; PL = 140 W (CW); f = 2450 MHz.

Table 6.

DC characteristics

Tj = 25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min Typ

Max Unit

V(BR)DSS drain-source breakdown voltage

VGS =0V; ID =2.16mA

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 216 mA

1.5

1.9

2.3

IDSS

drain leakage current

VGS =0V; VDS =28V

A

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

-41

IGSS

gate leakage current

VGS =11V; VDS = 0 V

500

gfs

forward transconductance

VDS =10V; ID =10.8A

RDS(on)

drain-source on-state resistance

VGS =VGS(th) + 3.75 V;

ID =7.56A

-69



Table 7.

RF characteristics

Test signal: CW; f = 2450 MHz; VDS = 28 V; IDq = 1300 mA; Tcase = 25 C unless otherwise specified

in a class-AB production test circuit.

Symbol

Parameter

Conditions

Min Typ

Max Unit

power gain

PL = 140 W

18.5

RLin

input return loss

PL =140 W

16

8dB



drain efficiency

PL =140 W

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