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ZXMS6004FFTA bảng dữ liệu(PDF) 5 Page - Diodes Incorporated

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Giải thích chi tiết về linh kiện  60V N-channel self protected enhancement mode Intellifet MOSFET
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nhà sản xuất  DIODES [Diodes Incorporated]
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ZXMS6004FFTA bảng dữ liệu(HTML) 5 Page - Diodes Incorporated

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ZXMS6004FF
Issue 1 - December 2008
5
www.zetex.com
© Diodes Incorporated, 2008
www.diodes.com
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Notes:
(d) The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This
allows the device to be used in the fully on state without interference from the current limit. The device is fully
protected at all drain currents, as the low power dissipation generated outside saturation makes current limit
unnecessary.
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Static Characteristics
Drain-Source clamp voltage
VDS(AZ)
60
65
70
V
ID=10mA
Off-state drain Ccrrent
IDSS
500
nA
VDS=12V, VIN=0V
Off-state drain current
IDSS
1
μA
VDS=36V, VIN=0V
Input threshold voltage
VIN(th)
0.7
1
1.5
V
VDS=VGS, ID=1mA
Input current
IIN
60
100
μA
VIN=+3V
Input current
IIN
120
200
μA
VIN=+5V
Input current while over
temperature active
220
μA
VIN=+5V
Static Drain-Source on-state
resistance
RDS(on)
400
600
m
Ω
VIN=+3V, ID=0.5A
Static Drain-Source on-state
resistance
RDS(on)
350
500
m
Ω
VIN=+5V, ID=0.5A
Continuous drain current(a)
ID
0.9
A
VIN=3V; TA=25°C
Continuous drain cCurrent
(a)
ID
1.0
A
VIN=5V; TA=25°C
Continuous drain current (b)
ID
1.2
A
VIN=3V; TA=25°C
Continuous drain current (b)
ID
1.3
A
VIN=5V; TA=25°C
Current limit
ID(LIM)
0.7
1.7
A
VIN=+3V,
Current limit (c)
ID(LIM)
12.2
A
VIN=+5V
Dynamic characteristics
Turn-on delay time
td(on)
5
μs
VDD=12V, ID=0.5A,
VGS=5V
Rise time
tr
10
μs
Turn-off delay time
td(off)
45
μs
Fall time
ff
15
μs



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