MPQ7091 MPQ7093

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc)

(IC = –10 mAdc, VCE = –10 Vdc)

(IC = –30 mAdc, VCE = –10 Vdc)

hFE

25

35

25

40

55

50

—

—

—

—

Collector – Emitter Saturation Voltage

(IC = –20 mAdc, IB = –2.0 mAdc)

VCE(sat)

—

–0.3

–0.5

Vdc

Base – Emitter Saturation Voltage

(IC = –20 mAdc, IB = –2.0 mAdc)

VBE(sat)

—

–0.7

–0.9

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)

fT

50

70

—

MHz

Output Capacitance

(VCB = –20 Vdc, IE = 0, f =1.0 MHz)

Cobo

—

3.0

5.0

pF

Input Capacitance

(VEB = –3.0 Vdc, IC = 0, f = 1.0 MHz)

Cibo

—

60

75

pF

DC CHARACTERISTICS

Figure 1. DC Current Gain

Figure 2. “ON” Voltages

Figure 3. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

200

20

–100

–1.0

–2.0

–5.0

–10

–20

–50

100

30

50

70

TJ = 125°C

25

°C

–55

°C

–3.0

–30

VCE = –10 V

–100

–1.0

–0.8

–0.6

–0.4

–0.2

0

–1.0

–2.0

–5.0

–10

–20

–50

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = –10 V

–3.0

–7.0

–30

–70

–1.2

–1.4

–100

2.0

1.0

0

–1.0

–2.0

–2.5

–1.0

–2.0

–5.0

–10

–20

–50

25

°C TO 125°C

–55

°C TO 25°C

–55

°C TO 125°C

qVB FOR VBE

qVC FOR VCE(sat)

–3.0

–7.0

–30

–70

–1.5

2.5

1.5

–0.5

0.5

IC/IB = 10

–7.0

–70

5.0