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DF005S bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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DF005S bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
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1 / 3 page ![]() DF005S-DF10S, Rev. A DF005S - DF10S 1.5 Ampere Bridge Rectifiers Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm). Electrical Characteristics T A = 25°C unless otherwise noted ©1998 Fairchild Semiconductor Corporation Features • Surge overload rating: 50 amperes peak. • Glass passivated junction. • Low leakage. Parameter Device Units 005S 01S 02S 04S 06S 08S 10S Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V DC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V Maximum Reverse Leakage, total bridge @ rated VR TA = 25 °C TA = 125 °C 5.0 500 µA µA Maximum Forward Voltage Drop, per bridge @ 1.0 A 1.1 V I 2t rating for fusing t < 8.35 ms 10 A 2Sec Typical Junction Capacitance, per leg VR = 4.0 V, f = 1.0 MHz 25 pF Symbol Parameter Value Units IO Average Rectified Current @ TA = 40 °C 1.5 A if(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 50 A PD Total Device Dissipation Derate above 25 °C 3.1 25 W mW/ °C RθJA Thermal Resistance, Junction to Ambient,** per leg 40 °C/W Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature -55 to +150 °C SDIP 0.060 (1.524) 0.040 (1.016) 0.135 (3.429)* 0.115 (2.921)* 0.008 (0.203) 0.004 (0.102) 0.410 (10.414) 0.360 ( 9.144) 0.310 (7.874) 0.290 (7.366) 0.009 (0.229) Typical 0.205 (5.207) 0.195 (4.953) 0.042 (1.067) 0.038 (0.965) 0.255 (6.477) 0.245 (6.223) 0.335 (8.509) 0.320 (8.128) LOW PROFILE ALSO AVAILABLE BODY - - 0.102 (2.591)* 0.095 (2.413)* Dimensions are in: inches (mm) Discrete POWER & Signal Technologies |
Số phần tương tự - DF005S |
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Mô tả tương tự - DF005S |
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