ACE1522B datasheet(2/6 Pages) ACE

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ACE1522B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

On/Off characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-50

Zero Gate Voltage Drain Current

IDSS

VDS=-50V, VGS=0V

-15

VDS=-50V, VGS=0V,

TJ=125℃

-60

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±10

On characteristics

Static Drain-Source On-Resistance

RDS(ON)

VGS=-5V, ID=-0.1A

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-1mA

-0.8

-1.75

-2

Forward Transconductance

gFS

VDS=-25V, ID=-0.1A

0.05

0.6

Switching characteristics

Total Gate Charge

VDS=-25V, ID=-0.1A

VGS=-5V

0.9

1.3

Gate-Source Charge

Qgs

0.2

Gate-Drain Charge

Qgd

0.3

Turn-On Delay Time

Td(on)

VDD=-30V, ID=-0.27A,

VGS=-10V

RGEN=6Ω

2.5

Turn-On Rise Time

6.3

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

4.8

9.6

Dynamic characteristics

Input Capacitance

Ciss

VDS=-10V, VGS=0V

f=200KHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS=-15mV,

f=1.0MHz

Drain-source diode characteristics and maximum ratings

Drain-Source Diode Forward

Voltage

VSD

VGS=0V, IS=-0.26A

(2)

-0.8

-1.2

Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is

defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the

user's board design.

2. Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2.0%

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