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MMFT5P03HD bảng dữ liệu(PDF) 1 Page - Motorola, Inc |
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MMFT5P03HD bảng dữ liệu(HTML) 1 Page - Motorola, Inc |
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1 / 12 page ![]() 1 Motorola TMOS Power MOSFET Transistor Device Data Designer's™ Data Sheet Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistor MMFT5P03HD is an advanced power MOSFET which utilizes Motorola’s High Cell Density HDTMOS process. This miniature surface mount MOSFET features ultra low RDS(on) and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MMFT5P03HD devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive — Can Be Driven by Logic ICs • Miniature SOT–223 Surface Mount Package — Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified DEVICE MARKING ORDERING INFORMATION 5P03H Device Reel Size Tape Width Quantity 5P03H MMFT5P03HDT3 13 ″ 12 mm embossed tape 4000 units Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International Rectifier. Thermal Clad is a trademark of the Bergquist Company. REV 2 Order this document by MMFT5P03HD/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA © Motorola, Inc. 1997 CASE 318E–04, Style 3 TO–261AA MMFT5P03HD TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS RDS(on) = 100 mΩ Motorola Preferred Device ™ D S G 1 2, 4 3 1 3 2 4 |
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