STM32F107VCT6 datasheet(52/103 Pages) STMICROELECTRONICS

52 / 103 page

Electrical characteristics

STM32F105xx, STM32F107xx

52/104

Doc ID 15274 Rev 6

5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Table 30.

Flash memory endurance and data retention

5.3.10

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Table 29.

Flash memory characteristics

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

Guaranteed by design, not tested in production.

Unit

tprog

16-bit programming time

TA = –40 to +105 °C

52.5

µs

tERASE Page (1 KB) erase time

TA = –40 to +105 °C

tME

Mass erase time

TA = –40 to +105 °C

IDD

Supply current

Read mode

fHCLK = 72 MHz with 2 wait

states, VDD = 3.3 V

Write / Erase modes

fHCLK = 72 MHz, VDD = 3.3 V

5mA

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

µA

Vprog

Programming voltage

3.6

Symbol

Parameter

Conditions

Value

Unit

Min(1)

Based on characterization, not tested in production.

Typ

Max

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

STM32F107VCT6 bảng dữ liệu(PDF) 52 Page - STMicroelectronics

STM32F107VCT6 bảng dữ liệu(HTML) 52 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

bảng dữ liệu tải về

Link URL