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ACT-RS128K32N-035P1T bảng dữ liệu(PDF) 3 Page - Aeroflex Circuit Technology

tên linh kiện ACT-RS128K32N-035P1T
Giải thích chi tiết về linh kiện  RAD Tolerant ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module
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Aeroflex Circuit Technology ACT-RS128K32
SCD3659 REV 3
12/17/98 Plainview NY (516) 694-6700
3
Standby Current
ISB
CE = VIH, OE = VIH,
f = 5 MHz, VCC = Max,
CMOS Compatible
30
30
mA
Output Low Voltage
VOL
IOL = 8 mA, VCC = Min
0.4
0.4
V
Output High Voltage
VOH
IOH = -4.0 mA, VCC = Min
2.4
2.4
V
AC Characteristics
(VCC = 5.0V, VSS = 0V, TC = -55°C to +125°C)
Read Cycle
Parameter
Sym
–035
Min Max
–045
Min Max
Units
Read Cycle Time
tRC
35
45
ns
Address Access Time
tAA
35
45
ns
Chip Enable Access Time
tACE
35
45
ns
Chip Enable to Output in Low Z*
tCLZ
3
3
ns
Output Enable to Output in Low Z*
tOLZ
0
0
ns
Chip Deselect to Output in High Z*
tCHZ
20
20
ns
Output Disable to Output in High Z*
tOHZ
10
15
ns
* Parameters guaranteed by design but not tested
Write Cycle
Parameter
Sym
–035
Min Max
–045
Min Max
Units
Write Cycle Time
tWC
35
45
ns
Chip Enable to End of Write
tCW
25
35
ns
Address Valid to End of Write
tAW
25
35
ns
Data Valid to End of Write
tDW
18
20
ns
Write Pulse Width
tWP
25
35
ns
Address Setup Time
tAS
0
0
ns
Write to Output in High Z *
tWHZ
10
15
ns
Data Hold from Write Time
tDH
0
0
ns
Address Hold Time
tAH
0
0
ns
* Parameters guaranteed by design but not tested
Data Retention Electrical Characteristics (Special Order Only)
(TC = -55°C to +125°C)
Parameter
Sym
Test Conditions
All Speeds
Min
Max
Units
VCC for Data Retention
VDR
CE
≥ V
CC – 0.2V
2
5.5
V
Data Retention Current
ICCDR1
VCC = 3V, 35 & 45ns
4
mA
DC Characteristics (Continued)
(4.5Vdc< VCC < 5.5Vdc, VSS = 0V, TC = -55°C to +125°C, Unless otherwise specified)
Parameter
Sym
Conditions
–035
Min
Max
–045
Min
Max
Units



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