MMDF3200Z datasheet(2/4 Pages) MOTOROLA

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MMDF3200Z

Motorola TMOS Power MOSFET Transistor Device Data

MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)

When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ 10 Seconds)

Parameter

Symbol

Maximum

Unit

Drain Current — Continuous @ TA = 25°C

Drain Current — Continuous @ TA = 70°C

Drain Current — Pulsed Drain Current (1)

IDM

11.5

9.2

57.5

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

2.0

Watts

mW/

°C

Thermal Resistance — Junction to Ambient

θJA

62.5

°C/W

Continuous Source Current (Diode Current)

TBD

When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ Steady State)

Parameter

Symbol

Maximum

Unit

Drain Current — Continuous @ TA = 25°C

Drain Current — Continuous @ TA = 70°C

Drain Current — Pulsed Drain Current (1)

IDM

8.0

5.9

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

1.28

10.2

Watts

mW/

°C

Thermal Resistance — Junction to Ambient

θJA

°C/W

Continuous Source Current (Diode Current)

TBD

When mounted on minimum FR–4 or G–10 board (VGS = 10 V @ Steady State)

Parameter

Symbol

Maximum

Unit

Drain Current — Continuous @ TA = 25°C

Drain Current — Continuous @ TA = 70°C

Drain Current — Pulsed Drain Current (1)

IDM

7.1

5.2

35.5

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

0.75

6.0

Watts

mW/

°C

Thermal Resistance — Junction to Ambient

θJA

166

°C/W

Continuous Source Current (Diode Current)

TBD

(1) Repetitive rating; pulse width limited by maximum junction temperature.

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