MMDF2P02HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

—

25

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

1.0

—

1.5

4.0

2.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

—

—

0.118

0.152

0.160

0.180

Ohm

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

2.0

3.0

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

420

588

pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

290

406

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

—

116

232

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

(VDS = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

—

19

38

ns

Rise Time

(VDS = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

tr

—

66

132

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

—

25

50

Fall Time

G = 6.0 Ω)

tf

—

37

74

Turn–On Delay Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

—

11

22

Rise Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

tr

—

21

42

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

—

45

90

Fall Time

G = 6.0 Ω)

tf

—

36

72

Gate Charge

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

QT

—

15

20

nC

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q1

—

1.2

—

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q2

—

5.0

—

Q3

—

4.0

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(2)

(IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

1.5

1.24

2.1

—

Vdc

Reverse Recovery Time

(VDD = 15 V, IS = 2.0 A,

dIS/dt = 100 A/µs)

trr

—

38

—

ns

Reverse Recovery Time

(VDD = 15 V, IS = 2.0 A,

dIS/dt = 100 A/µs)

trr

—

38

—

ns

(VDD = 15 V, IS = 2.0 A,

dIS/dt = 100 A/µs)

ta

—

17

—

dIS/dt = 100 A/µs)

tb

—

21

—

QRR

—

0.034

—

µC

(1) Negative sign for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.