DYNAMIC CHARACTERISTICS (per section)

ARF450

Symbol

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

V

V

f = 1 MHz

V

V

I

R

MIN

TYP

MAX

980

1200

87

120

25

40

510

3.0

7

15

25

37

UNIT

pF

ns

Symbol

G

PS

η

ψ

Test Conditions

f = 81.36 MHz

V

V

No Degradation in Output Power

Characteristic

Common Source Amplifier Power Gain

Drain Efficiency

Electrical Ruggedness VSWR 10:1

MIN

TYP

MAX

12

13

70

75

UNIT

dB

%

APT Reserves the right to change, without notice, the specifications and information contained herein.

FREQUENCY (MHz)

Figure 1, Typical Gain vs Frequency

30

25

20

15

10

5

0

30

45

60

75

90

105

120

Class C

16

12

8

4

0

0

2

468

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

3000

1000

500

100

50

10

1

5

10

50

150

Figure 3, Typical Transfer Characteristics

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

TJ = -55°C

TJ = -55°C

TJ = +125°C

TJ = +25°C

Ciss

Coss

Crss

1

5

10

50 100

500

Figure 4, Typical Maximum Safe Operating Area

TC =+25°C

TJ =+200°C

SINGLE PULSE

OPERATION HERE

LIMITED BY RDS (ON)

Per each transistor side unless otherwise specified.

50

10

5

1

0.1

1ms

10ms

100ms

0.5

100us