MIN

TYP

MAX

APT8030JN

27

APT8035JN

25

APT8030JN

108

APT8035JN

100

1.8

1010

1200

23

46

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d

(on)

t

r

t

d

(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

R

G

= 0.6

Ω

MIN

TYP

MAX

5780

6800

725

1015

240

360

245

370

28

40

113

170

14

28

14

28

48

72

12

24

UNIT

pF

nC

ns

APT8030/8035JN

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current

(Body Diode)

(Body Diode)

GS

= 0V, I

S

= -I

D

[Cont.])

Reverse Recovery Time (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

Reverse Recovery Charge (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

UNIT

Amps

Volts

ns

µC

Characteristic / Test Conditions

Maximum Torque for Device Mounting Screws and Electrical Terminations.

UNIT

nH

Volts

pF

in-lbs

PACKAGE CHARACTERISTICS

Symbol

L

D

L

S

V

Isolation

C

Isolation

Torque

MIN

TYP

MAX

3

5

2500

35

13

µS, Duty Cycle < 2%

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D=0.5