DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d

(on)

t

r

t

d

(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

R

G

= 0.6

Ω

UNIT

pF

nC

ns

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current

(Body Diode)

(Body Diode)

GS

= 0V, I

S

= -I

D

[Cont.])

Reverse Recovery Time (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

Reverse Recovery Charge (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

UNIT

Amps

Volts

ns

µC

Characteristic / Test Conditions

Maximum Torque for Device Mounting Screws and Electrical Terminations.

UNIT

nH

Volts

pF

in-lbs

PACKAGE CHARACTERISTICS

Symbol

L

D

L

S

V

Isolation

C

Isolation

Torque

µS, Duty Cycle < 2%

APT8018JN

MIN

TYP

MAX

3

5

2500

70

13

MIN

TYP

MAX

APT8018JN

40

APT8018JN

160

1.8

945

1800

36

60

MIN

TYP

MAX

11715

14000

1430

2000

460

690

468

700

72

110

176

265

21

40

19

40

70

105

13

25

0.2

0.1

0.05

0.01

0.005

0.001

0.0005

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.01

0.02

0.05

0.1

0.2

D=0.5