V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

V

SD

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

APT10M11LVR

TO-264 Package Outline

TC =+25°C

TJ =+150°C

SINGLE PULSE

400

100

50

10

5

1

20

16

12

8

4

0

OPERATION HERE

LIMITED BY RDS (ON)

Crss

19.51 (.768)

20.50 (.807)

19.81 (.780)

21.39 (.842)

25.48 (1.003)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

0.76 (.030)

1.30 (.051)

3.10 (.122)

3.48 (.137)

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

2.59 (.102)

3.00 (.118)

0.48 (.019)

0.84 (.033)

Drain

Source

Gate

Dimensions in Millimeters and (Inches)

2.29 (.090)

2.69 (.106)

5.79 (.228)

6.20 (.244)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC

2-Plcs.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

Coss

Ciss

30,000

10,000

5,000

1,000

500

400

100

50

10

5

1

100

µS

10mS

100mS

DC

1mS

TJ =+150°C

TJ =+25°C

Coss

Ciss

1

5

10

50

100

.01

.1

1

10

50

0

100

200

300

400

500

0

0.4

0.8

1.2

1.6

2.0

VDS=50V

VDS=20V

VDS=80V

I

D

= 0.5 I

D

[Cont.]