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APT10M07JVR bảng dữ liệu(PDF) 2 Page - Advanced Power Technology

tên linh kiện APT10M07JVR
Giải thích chi tiết về linh kiện  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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nhà sản xuất  ADPOW [Advanced Power Technology]
Trang chủ  http://www.advpowertech.com
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APT10M07JVR bảng dữ liệu(HTML) 2 Page - Advanced Power Technology

  APT10M07JVR Datasheet HTML 1Page - Advanced Power Technology APT10M07JVR Datasheet HTML 2Page - Advanced Power Technology APT10M07JVR Datasheet HTML 3Page - Advanced Power Technology APT10M07JVR Datasheet HTML 4Page - Advanced Power Technology  
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DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= 100A @ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
R
G
= 0.6
Ω
MIN
TYP
MAX
18000
21600
6800
9500
2800
4200
700
1050
130
195
300
435
25
50
60
120
80
120
20
40
UNIT
pF
nC
ns
APT10M07JVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
µC
MIN
TYP
MAX
225
900
1.3
330
3
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µs)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 142µH, RG = 25Ω, Peak IL = 225A
2 Pulse Test: Pulse width < 380
µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL / PACKAGE CHARACTERISTICS
Symbol
RθJC
RθJA
VIsolation
Torque
MIN
TYP
MAX
0.18
40
2500
13
UNIT
°C/W
Volts
lb•in
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.



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