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APT100GF60JR bảng dữ liệu(PDF) 2 Page - Advanced Power Technology

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APT100GF60JR bảng dữ liệu(HTML) 2 Page - Advanced Power Technology

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ADVANCE
TECHNICAL
INFORMATION
APT100GF60JR
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.66VCES
IC = IC2
RG = 10W
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10W
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10W
TJ = +25°C
VCE = 20V, IC = IC2
MIN
TYP
MAX
4400
480
300
335
40
195
50
200
190
270
50
170
400
95
6.3
5.2
11.5
55
180
365
90
10.5
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
UNIT
°C/W
oz
gm
lb•in
N•m
MIN
TYP
MAX
0.32
40
1.03
29.2
10
1.5
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
Symbol
RQJC
RQJA
WT
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C = IC2, RGE = 25
W, L = 17µH, T
j = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.



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