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APT1004R2BN bảng dữ liệu(PDF) 3 Page - Advanced Power Technology

tên linh kiện APT1004R2BN
Giải thích chi tiết về linh kiện  N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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nhà sản xuất  ADPOW [Advanced Power Technology]
Trang chủ  http://www.advpowertech.com
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APT1004R2BN bảng dữ liệu(HTML) 3 Page - Advanced Power Technology

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V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
-25
0
25
50
75
100 125 150
1.4
1.2
1.0
0.8
0.6
0.4
APT1004R/1004R2BN
DS
D
DS
V
> I (ON) x R
(ON)MAX.
230
µ SEC. PULSE TEST
5V
4.5V
GS
V
=5.5V,6V &10V
4V
10
0
02
4
6
8
2
4
8
6
2
3
5
1
0
4
J
T =+125
°C
T =+25
°C
J
T =-55
°C
J
J
T =+125
°C
T =-55
°C
J
T =+25
°C
J
-25
0
25
50
75
100 125 150
-50
25
50
75
100
125
150
0
0.0
2.5
2.0
1.5
1.0
0.5
200
300
400
500
100
0
APT1004R2BN
APT1004RRBN
1
2
3
4
5
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
2.5
5V
4.5V
V
=10V
GS
6V
5.5V
4V
V
=10V
GS
GS
V
=20V
24
6
8
10
12
0.7
0.9
0.8
1.0
1.1
1.2
5
0
1
3
4
2
-25
0
25
50
75
100 125 150
-50
0
4
812
16
20
2.0
1.5
1.0
0
0.5
0.0
T
J
= 25
°C
2
µ SEC. PULSE TEST
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]



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