V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

V

SD

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

APT10043JVR

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

* Source

Drain

Gate

*

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

* Source

Source terminals are shorted

internally. Current handling

capability is equal for either

Source terminal.

ISOTOP

1

5

10

50 100

500 1000

.01

.1

1

10

50

0

100

200

300

400

500

600

700

0.2

0.4

0.6

0.8

1.0

1.2

1.4

TC =+25°C

TJ =+150°C

SINGLE PULSE

100

50

10

5

1

.5

.1

20

16

12

8

4

0

30,000

10,000

5,000

1,000

500

100

100

50

10

5

1

OPERATION HERE

LIMITED BY RDS (ON)

TJ =+150°C

TJ =+25°C

VDS=500V

VDS=100V

Crss

Coss

Ciss

I

D

= I

D

[Cont.]

10

µS

1mS

10mS

100mS

DC

100

µS

"UL Recognized" File No. E145592

VDS=200V