REF01 datasheet(4/12 Pages) AD

4 / 12 page

REV. C

REF01

–4–

WAFER TEST LIMITS

REF01NT

REF01N

REF01GT

REF01G

Parameter

Symbol

Conditions

Limit

Unit

Output Voltage

IL = 0

10.05

10.03

10.10

10.05

V max

9.95

9.97

9.90

9.95

V min

Output Adjustment

Range

VTRIM

RP = 10 k

Ω±3.0

±3.0

% min

Line Regulation

VIN = 13 V to 33 V

0.015

0.01

0.015

0.01

%/V max

*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed

for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

(@ VIN = 15 V, TA = 25 C for REF01N and REF01G devices, TA = 125 C for REF01NT and REF01GT devices,

unless otherwise noted.)*

TYPICAL ELECTRICAL CHARACTERISTICS

REF01NT

REF01N

REF01GT

REF01G

Parameter

Symbol

Conditions

Typical

Unit

Load Regulation

IL = 0 mA to 10 mA

IL = 0 mA to 8 mA,

NT, GT @ 125

°C

0.007

0.005

0.009

0.006

%/mA

Output Voltage

Noise

en p-p

0.1 Hz to 10 Hz

µV p-p

Turn-On Settling

±0.1% of Final

Time

tON

Value NT, GT @

125

°C

7.5

5.0

7.5

5.0

µs

Quiescent Current

ISY

No Load, NT,

GT @ 125

°C

1.4

1.0

1.4

1.0

Load Current

Sink Current

–0.5

Short Circuit

Current

ISC

VO = 0

3030

30mA

Output Voltage

Temperature

Coefficient

TCVO

ppm/

°C

*For 25

°C specifications of REF01NT and REF01GT, see REF01N and REF01G, respectively.

(@ VIN = 15 V, TA = 25 C, unless otherwise noted.)*

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