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DG406BP25 bảng dữ liệu(PDF) 2 Page - Dynex Semiconductor

tên linh kiện DG406BP25
Giải thích chi tiết về linh kiện  Gate Turn-off Thyristor
PDF  19 Pages
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nhà sản xuất  DYNEX [Dynex Semiconductor]
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DG406BP25 bảng dữ liệu(HTML) 2 Page - Dynex Semiconductor

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DG406BP25
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SURGE RATINGS
Conditions
8.0
0.32 x 106
kA
A2s
Surge (non-repetitive) on-state current
I2t for fusing
10ms half sine. T
j = 125
oC
10ms half sine. T
j =125
oC
di
T/dt
Critical rate of rise of on-state current
300
500
V/
µs
Max.
Units
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
dV
D/dt
200
nH
1000
V/
µs
To 66% V
DRM; VRG = -2V, Tj = 125
oC
I
TSM
Symbol
Parameter
I2t
V
D = 2000V, IT = 1000A, Tj = 125
oC, I
FG ≥ 30A,
Rise time > 1.0
µs
A/
µs
To 66% V
DRM; RGK ≤ 1.5Ω, Tj = 125
oC
L
S
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
10
Min.
-
20
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
15
60
-
20
15
-
-
µs
100
70
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ/dt
t
ON(min)
t
OFF(min)
µs
A/
µs
kW
W
A
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-0.1
-
0.009
oC/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.041
oC/W
Anode side cooled
oC/W
0.07
Virtual junction temperature
T
OP/Tstg
Operating junction/storage temperature range
-
Clamping force
-
125
15.0
11.0
-40
kN
oC/W
Clamping force 12.0kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
oC
oC
-
I
T = 1000A, VD = VDRM, Tj = 125
oC,
di
GQ/dt = 30A/µs, Cs = 1.0µF



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