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DFM200PXM33-F000 bảng dữ liệu(PDF) 2 Page - Dynex Semiconductor |
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DFM200PXM33-F000 bảng dữ liệu(HTML) 2 Page - Dynex Semiconductor |
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2 / 6 page ![]() DFM200PXM33-F000 2/6 www.dynexsemi.com ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Max. Units VRRM Repetitive peak reverse voltage Tj = 125°C 3300 V IF Forward current (per arm) DC, Tcase = 70°C 200 A IFM Max. forward current (per arm) Tcase = 105°C, tp = 1ms 400 A I 2t I 2t value fuse current rating VR = 0, tp = 10ms, Tj = 125°C 20 kA 2s Pmax Max. power dissipation Tcase = 25°C, Tj = 125°C 1040 W Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V QPD Partial discharge – per module IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS 10 pC VRRM DC DC Voltage stability 25°C at sea level, 100 FITs 2200 V THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 33mm Clearance: 20mm CTI (Comparative Tracking Index): 350 Symbol Parameter Test Conditions Min Typ. Max Units Rth(j-c) Thermal resistance (per arm) Continuous dissipation – junction to case - - 96 °C/kW Rth(c-h) Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - - 16 °C/kW Tj Junction temperature -40 - 125 °C Tstg Storage temperature range -40 - 125 °C Screw Torque Mounting – M6 - - 5 Nm Electrical connections – M5 - - 4 Nm |
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