MMBF0201N

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

1

2

3

4

6

0

0.6

0.8

1.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. Transfer Characteristics

0

0.3

0.6

0.9

1.2

1.4

0

0.6

0.8

1.0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. On–Region Characteristics

0

0.2

0.4

1

0

0.3

0.9

1.2

1.5

0

5

10

20

0

1.0

1.5

2.0

2.4

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 4. On–Resistance versus

Gate–to–Source Voltage

0

10

12

14

16

–25

25

100

150

0.60

1.10

Qg, TOTAL GATE CHARGE (pC)

Figure 5. Gate Charge

TEMPERATURE (

°C)

Figure 6. Threshold Voltage Variance

Over Temperature

5

0.4

0.4

0.6

0.6

0.8

15

0

160

450

2000

0.2

125

°C

25

°C

– 55

°C

0.2

VGS = 5 V

VGS = 4 V

VGS = 3 V

VGS = 4.5 V

VGS = 10 V

0.5

2

4

6

8

3400

VDS = 16 V

ID = 300 mA

ID = 250 µA

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

0.65

0

50

75

125

VGS = 10, 9, 8, 7, 6 V