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CSD18533KCS bảng dữ liệu(PDF) 1 Page - Texas Instruments |
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CSD18533KCS bảng dữ liệu(HTML) 1 Page - Texas Instruments |
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1 / 9 page ![]() 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C Id = 75A TC = 125ºC Id = 75A G001 0 2 4 6 8 10 0 5 10 15 20 25 30 35 Qg - Gate Charge (nC) ID = 75A VDS = 30V G001 CSD18533KCS www.ti.com SLPS362A – SEPTEMBER 2012 – REVISED JANUARY 2013 60-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18533KCS 1 FEATURES PRODUCT SUMMARY 2 • Ultra Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain to Source Voltage 60 V • Avalanche Rated Qg Gate Charge Total (10V) 28 nC Qgd Gate Charge Gate to Drain 3.9 nC • Logic Level VGS = 4.5V 6.9 m Ω • Pb Free Terminal Plating RDS(on) Drain to Source On Resistance VGS = 10V 5 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.9 V • Halogen Free • TO-220 Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS TO-220 Plastic CSD18533KCS Tube 50 Tube Package • DC-DC Conversion • Secondary Side Synchronous Rectifier ABSOLUTE MAXIMUM RATINGS • Motor Control TA = 25°C VALUE UNIT VDS Drain to Source Voltage 60 V DESCRIPTION VGS Gate to Source Voltage ±20 V The NexFET™ power MOSFET has been designed Continuous Drain Current (Package limited), 100 to minimize losses in power conversion applications. TC = 25°C Continuous Drain Current (Silicon limited), ID 114 A TC = 25°C Continuous Drain Current (Silicon limited), 72 TC = 100°C IDM Pulsed Drain Current (1) 135 A PD Power Dissipation 160 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 135 mJ ID = 52A, L = 0.1mH, RG = 25Ω (1) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2012–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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